- Description
Product Overview
The fundamental principle of this semiconductor laser hair removal treatment is based on the highly proven theory of selective photothermolysis. The device emits a precise 808-810nm laser, which is the most readily absorbed wavelength by pigmented hair follicles without damaging the surrounding epidermis. By effectively disrupting the hair follicle’s ability to regenerate, it allows only the growth of fine, soft vellus hair, or prevents regrowth entirely. Typically, permanent hair removal is fully achieved after just 4-5 treatment sessions, while simultaneously delivering excellent skin rejuvenation effects.

Advanced Working Principle & Core Technologies
Selective Photothermolysis & Follicle Apoptosis
Based on the principle of selective photothermolysis, a specific intensity of 808nm laser is applied to the targeted area. The energy of the emitted light is rapidly converted into heat, which is exclusively absorbed by the melanin within the hair follicle root. As the temperature within the follicle rises and reaches a critical threshold, the hair papilla and follicle structure become irreversibly damaged over time. These disrupted follicles are eventually expelled from the body through natural metabolic processes.
Highly Collimated Beam Quality
The system is equipped with high-efficiency lasers collimated by aspherical microlenses. This ultra-high beam quality prevents harsh glare and light scattering, enabling a much stronger penetration depth into human tissues for faster and more effective hair removal.

Key Features & Advantages

Broad Clinical Applications
Fast & Permanent Hair Removal
The 12mm x 24mm large spot size combined with a 1-10Hz fast repetition rate makes the system perfectly suited for permanent hair removal on all body areas, including:
Skin Rejuvenation
Alongside removing unwanted hair, the photothermal effect subtly stimulates dermal collagen, resulting in noticeable skin tightening, pore reduction, and overall skin rejuvenation effects.


Technical Specifications
| Specification | Details |
| Laser Type | 808-810nm Semiconductor Diode Laser |
| Laser Wavelength | 800nm - 810nm |
| Electrical Machine Power | 2600W |
| Laser Output Power | 1200W (120W per bar × 10 bars) |
| Spot Size / Area | 12mm × 24mm |
| Energy Density / Fluence | 10 - 100 J/cm² |
| Pulse Width | 10 - 300 ms |
| Repetition Rate (Frequency) | 1 - 10 Hz |
| Output Mode | Pulsed Mode |
| Conduction Medium | Sapphire Contact Cooling |
| Contact Temperature | Constant 0~5°C |
| Cooling Method | Air Cooling + Water Cooling + 300W TEC Semiconductor Cooling |
| Display Screen | 10.4-inch High-Definition Capacitive Color Screen |
| Handpiece Weight & Lifespan | 1.2 kg / Up to 100 million shots |
| Input Voltage | 220V ±10% or 110V ±10% |



